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SCH2809 rev.0 i page 1 of 6 i www.onsemi.com ordering number : ena0446 SCH2809 mosfet : p-channel silicon mosfet sbd : schottky barrier diode general-purpose switching device applications features composite type with a p-channel sillicon mosfet (sch1305) and a schottky barrier diode (sbs018) contained in one package facilitating high-density mounting. [mosfet] low on-resistance. ultrahigh-speed switching. 1.8v drive. [sbd] short reverse recovery time . low forward voltage . specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit [mosfet] drain-to-source voltage v dss - -12 v gate-to-source voltage v gss 10 v drain current (dc) i d - -1.2 a drain current (pulse) i dp pw 10 s, duty cycle 1% --4.8 a allowable power dissipation p d mounted on a ceramic board (900mm 2 ? 0.8mm) 1unit 0.6 w channel temperature tch 150 c storage temperature tstg - -55 to +125 c [sbd] repetitive peak reverse voltage v rrm 15 v nonrepetitive peak reverse surge voltage v rsm 15 v a verage output current i o 0.5 a surge forward current i fsm 50hz sine wave, 1 cycle 3 a junction temperature tj - -55 to +125 c storage temperature tstg - -55 to +125 c marking : qj ? 2011, scillc. all rights reserved. jan-2011, rev. 0 www.onsemi.com publication order number: SCH2809/d
SCH2809 rev.0 i page 2 of 6 i www.onsemi.com electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit [mosfet] drain-to-source breakdown voltage v (br)dss i d =--1ma, v gs =0v --12 v zero-gate voltage drain current i dss v ds =--12v, v gs =0v --10 a gate-to-source leakage current i gss v gs = 8v, v ds =0v 10 a cutoff voltage v gs (off) v ds =--6v, i d =--1ma --0.3 --1.0 v forward transfer admittance ? yfs ? v ds =--6v, i d =--0.8a 1.08 1.8 s r ds (on)1 i d =--0.6a, v gs =- -4.5v 235 310 m ? static drain-to-source on-state resistance r ds (on)2 i d =--0.3a, v gs =- -2.5v 335 470 m ? r ds (on)3 i d =--0.1a, v gs =- -1.8v 445 670 m ? input capacitance ciss v ds =--6v, f=1mhz 160 pf output capacitance coss v ds =--6v, f=1mhz 45 pf reverse transfer capacitance crss v ds =--6v, f=1mhz 35 pf t urn-on delay time t d (on) see specified test circuit. 11 ns rise time t r see specified test circuit. 45 ns t urn-off delay time t d (off) see specified test circuit. 29 ns fall time t f see specified test circuit. 30 ns t otal gate charge qg v ds =--6v, v gs =--4.5v, i d =--1.2a 2.6 nc gate-to-source charge qgs v ds =--6v, v gs =--4.5v, i d =--1.2a 0.25 nc gate-to-drain ?iller?charge qgd v ds =--6v, v gs =--4.5v, i d =--1.2a 0.65 nc diode forward voltage v sd i s =--1.2a, v gs =0v --0.92 --1.5 v [sbd] reverse voltage v r i r =0.5ma 15 v forward voltage v f i f =0.5a 0.4 0.46 v reverse current i r v r =6v 90 a interterminal capacitance c v r =10v, f=1mhz 13 pf reverse recovery time t rr i f =i r =100ma, see specified test circuit. 10 ns package dimensions electrical connection unit : mm 7028-003 64 12 3 5 1 : gate 2 : source 3 : anode 4 : cathode 5 : drain 6 : drain t op view 1.6 1.6 1.5 0.05 0.5 0.05 0.56 0.25 0.2 0.2 1 3 2 64 5 1 : gate 2 : source 3 : anode 4 : cathode 5 : drain 6 : drain sanyo : sch6
SCH2809 rev.0 i page 3 of 6 i www.onsemi.com pw=10 s d.c. 1% p. g 50 ? g s d i d = --0.8a r l =7.5 ? v dd = --6v v out SCH2809 v in 0v -- 4 . 5v v in duty 10% 50 ? 100 ? 10 ? - -5v t rr 100ma 100ma 10ma 10 s switching time test circuit t rr test circuit [mosfet] [sbd] r ds (on) -- v gs 0- -0.1 - -0.3 - -0.6 - -0.9 - -1.2 - -1.5 0 - -0.5 - -1.0 - -1.5 - -2.0 0 - -0.2 --0.3 --0.4 --0.5 i d -- v ds it07144 0- -0.5 --1.0 --1.5 --2.0 --3.0 - -2.5 i d -- v gs it04354 r ds (on) -- ta v gs = --1.0v - -1.5v -- 2 . 5v - -1.8v - -4.5v -- 3 . 0v - -3.5v v ds = -- 6v 25 c - -25 c t a=75 c 25 c 75 c t a= - -25 c static drain-to-source on-state resistance, r ds (on) -- m ? static drain-to-source on-state resistance, r ds (on) -- m ? drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v ambient temperature, ta -- c gate-to-source voltage, v gs -- v drain current, i d -- a - -60 --40 --20 0 20 40 60 80 100 120 140 160 it07142 200 100 400 600 300 500 700 800 0 it07143 0--1--2- -3 --4 --5 --6 --7 --8 200 400 600 800 100 300 500 700 0 ta=25 c - -0.6a i d = --0.4a i d = --0.1a, v gs = --1.8v i d = --0.3a, v gs = --2.5v i d = --0.6a, v gs = --4.5v [ mosfet ] [ mosfet ] [ mosfet ] [ mosfet ]
SCH2809 rev.0 i page 4 of 6 i www.onsemi.com 0--2--4- -6 --8 --10 --12 100 10 7 5 3 2 5 3 2 - -0.1 23 5 23 7 - -1.0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 - -0.5 - -1.0 - -1.5 - -2.0 - -2.5 - -3.0 - -3.5 - -4.0 - -4.5 v gs -- qg it04361 sw time -- i d it04359 ciss, coss, crss -- v ds it04357 - -0.01 23 57 - -0.1 23 23 57 - -1.0 0.1 1.0 7 5 3 2 5 3 2 100 10 7 5 3 2 7 5 3 2 3 2 ? y fs ? -- i d it04358 - -0.4 --0.6 --0.8 --1.0 --1.2 --1.4 - -0.1 - -1.0 7 5 3 2 5 3 2 i s -- v sd it04360 v ds = -- 6v i d = --1.2 a 75 c 25 c t a= --25 c v ds = --6v v gs =0v -- 2 5 c 25 c ta =75 c f=1mhz ciss coss crss v dd = -- 6v v gs = --4.5 v t d (on) t d (off) t r t f gate-to-source voltage, v gs -- v drain-to-source voltage, v ds -- v ciss, coss, crss -- pf drain current, i d -- a switching time, sw time -- ns drain current, i d -- a forward transfer admittance, ? yfs ? -- s diode forward voltage, v sd -- v source current, i s -- a [ mosfet ] [ mosfet ] [ mosfet ] [ mosfet ] [ mosfet ] a s o [mosfet] drain-to-source voltage, v ds -- v drain current, i d -- a 2 - -0.1 2 3 5 7 2 3 5 7 - -1.0 - -10 3 5 7 - -0.01 - -1.0 23 57 - -10 - -0.1 23 57 - -0.01 23 57 23 it11233 10 s i dp = --4.8a i d = --1.2a 100 s 1ms 10ms 100ms dc operation (ta=25 c ) operation in this area is limited by r ds (on). t a=25 c single pulse mounted on a ceramic board (900mm 2 ? 0.8mm) 1unit 0 0 20 40 0.2 0.4 0.6 0.8 60 80 100 120 140 160 p d -- ta ambient temperature, ta -- c allowable power dissipation, p d -- w mounted on a ceramic board (900mm 2 ? 0.8mm) 1unit it11234 [ mosfet ] t otal gate charge, qg -- nc
SCH2809 rev.0 i page 5 of 6 i www.onsemi.com 0 1.0 0.1 0.01 0.3 0.4 0.1 0.2 7 5 3 2 7 5 3 2 0.5 i f -- v f t a=125 c 100 c 75 c 50 c 25 c it06804 it06806 it06805 it06807 0 1.0 2 5 3 7 2 5 3 7 2 5 3 7 2 5 3 7 10 100 1000 10000 51015 i r -- v r t a=125 c 25 c 50 c 75 c 100 c 1.0 10 2 2 3 5 5 10 7 7 357 23 c -- v r 180 360 360 0 0 0.2 0.8 0.9 0.6 0.4 0.2 0.7 0.5 0.3 0.1 0.4 0.6 1.4 1.2 1.0 0.8 p f (av) -- i o (1) (2) (4) (3) f=1mhz [sbd] [sbd] [sbd] [sbd] [sbd] i s 20ms t 7 0.01 23 7 0.1 0 5237 1.0 523 3.0 3.5 2.0 1.0 2.5 1.5 0.5 id00338 i fsm -- t tim e, t -- s surge forward current, i fsm (peak) -- a forward voltage, v f -- v forward current, i f -- a reverse voltage, v r -- v reverse current, i r -- a a verage output current, i o -- a (1) rectangular wave =60 (2) rectangular wave =120 (3) rectangular wave =180 (4) sine wave =180 a verage forward power dissipation, p f (av) -- w reverse voltage, v r -- v interterminal capacitance, c -- pf rectangular wave sine wave current waveform 50hz sine wave
SCH2809 rev.0 i page 6 of 6 i www.onsemi.com SCH2809/d

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